| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 51, № 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots |
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| Том 52, № 6 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers |
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| Том 52, № 9 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures |
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| Том 52, № 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy |
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