作者的详细信息
Aleksandrov, O. V.
| 期 | 栏目 | 标题 | 文件 |
| 卷 50, 编号 6 (2016) | Amorphous, Vitreous, and Organic Semiconductors | Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen | |
| 卷 51, 编号 8 (2017) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Influence of traps in silicon dioxide on the breakdown of MOS structures | |
| 卷 52, 编号 6 (2018) | Physics of Semiconductor Devices | Model for Charge Accumulation in n- and p-MOS Transistors during Tunneling Electron Injection from a Gate | |
| 卷 52, 编号 13 (2018) | Physics of Semiconductor Devices | Charge Accumulation in MOS Structures with a Polysilicon Gate under Tunnel Injection | |
| 卷 53, 编号 2 (2019) | Electronic Properties of Semiconductors | Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions |