| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 3 (2016) |
Physics of Semiconductor Devices |
Microdisk Injection Lasers for the 1.27-μm Spectral Range |
|
| Том 50, № 9 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range |
|
| Том 50, № 10 (2016) |
Physics of Semiconductor Devices |
Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture |
|
| Том 51, № 9 (2017) |
Electronic Properties of Semiconductors |
Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range |
|
| Том 51, № 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors |
|
| Том 52, № 1 (2018) |
Physics of Semiconductor Devices |
Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells |
|
| Том 53, № 8 (2019) |
Physics of Semiconductor Devices |
Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation |
|
| Том 53, № 8 (2019) |
Physics of Semiconductor Devices |
Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers |
|
