| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 1 (2016) |
Erratum |
Erratum to: “Vacancies in epitaxial graphene” |
|
| Том 50, № 3 (2016) |
Carbon Systems |
Model of Adsorption on Amorphous Graphene |
|
| Том 50, № 6 (2016) |
Carbon Systems |
Substitutional impurity in single-layer graphene: The Koster–Slater and Anderson models |
|
| Том 51, № 2 (2017) |
Carbon Systems |
On the theory of adsorption on graphene-like compounds |
|
| Том 51, № 5 (2017) |
Carbon Systems |
Effect of intercalated hydrogen on the electron state of quasi-free graphene on a SiC substrate |
|
| Том 52, № 2 (2018) |
Carbon Systems |
On the Extended Holstein–Hubbard Model for Epitaxial Graphene on Metal |
|
| Том 52, № 3 (2018) |
Carbon Systems |
Electron–Electron and Electron–Phonon Interactions in Graphene on a Semiconductor Substrate: Simple Estimations |
|
| Том 52, № 7 (2018) |
Carbon Systems |
Effect of Electron–Phonon Interaction on the Conductivity and Work Function of Epitaxial Graphene |
|
| Том 53, № 1 (2019) |
Carbon Systems |
A Chainlike Model of the Zigzag Edge Decoration of Graphene |
|
| Том 53, № 5 (2019) |
Electronic Properties of Semiconductors |
On Estimates of the Electron Affinity of Silicon-Carbide Polytypes and the Band Offsets in Heterojunctions Based on These Polytypes |
|
| Том 53, № 7 (2019) |
Carbon Systems |
Epitaxial Carbyne: Analytical Results |
|
