| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 4 (2016) |
Surfaces, Interfaces, and Thin Films |
Induced surface states of the ultrathin Ba/3C-SiC(111) interface |
|
| 卷 50, 编号 10 (2016) |
Surfaces, Interfaces, and Thin Films |
The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface |
|
| 卷 51, 编号 3 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types |
|
| 卷 51, 编号 5 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice |
|
| 卷 51, 编号 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate |
|
| 卷 52, 编号 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources |
|
| 卷 52, 编号 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates |
|
| 卷 52, 编号 6 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution |
|
| 卷 53, 编号 2 (2019) |
Surfaces, Interfaces, and Thin Films |
Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers |
|
| 卷 53, 编号 3 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires |
|
| 卷 53, 编号 14 (2019) |
Nanostructures Characterization |
Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates |
|
