作者的详细信息
Mnatsakanov, T. T.
| 期 | 栏目 | 标题 | 文件 |
| 卷 50, 编号 3 (2016) | Physics of Semiconductor Devices | High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base | |
| 卷 51, 编号 2 (2017) | Physics of Semiconductor Devices | Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors | |
| 卷 51, 编号 6 (2017) | Physics of Semiconductor Devices | On the limit of the injection ability of silicon p+–n junctions as a result of fundamental physical effects | |
| 卷 51, 编号 8 (2017) | Physics of Semiconductor Devices | Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers |