作者的详细信息
Popov, V. D.
| 期 | 栏目 | 标题 | 文件 |
| 卷 50, 编号 3 (2016) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Two Stages of Surface-Defect Formation in a MOS Structure under Low-Dose Rate Gamma Irradiation | |
| 卷 53, 编号 1 (2019) | Physics of Semiconductor Devices | Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO2 Interface in a MOS Transistor |