电邮这篇文章 Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO2 Interface in a MOS Transistor
- 作者: Kulikov N.A.1, Popov V.D.1
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隶属关系:
- National Research Nuclear University “Moscow Engineering Physics Institute”
- 期: 卷 53, 编号 1 (2019)
- 页面: 110-113
- 栏目: Physics of Semiconductor Devices
- URL: https://journal-vniispk.ru/1063-7826/article/view/205629
- DOI: https://doi.org/10.1134/S1063782619010123
- ID: 205629
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详细
The results of experimental investigation into surface-defect formation under the effect of gamma-radiation with a dose rate P = 0.1 rad(Si)/s on MOS (metal-oxide-semiconductor) transistors with the n-type channel in the passive and active modes are presented. Two stages of surface-defect formation are observed. A qualitative model is proposed to explain the effect of the the drain transistor voltage on the defect formation process.
作者简介
N. Kulikov
National Research Nuclear University “Moscow Engineering Physics Institute”
Email: wdpopov@mail.ru
俄罗斯联邦, Moscow, 115409
V. Popov
National Research Nuclear University “Moscow Engineering Physics Institute”
编辑信件的主要联系方式.
Email: wdpopov@mail.ru
俄罗斯联邦, Moscow, 115409
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