| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 10 (2016) |
Physics of Semiconductor Devices |
On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm |
|
| Том 52, № 1 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Investigation of the Modified Structure of a Quantum Cascade Laser |
|
| Том 52, № 10 (2018) |
Physics of Semiconductor Devices |
Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates |
|
| Том 52, № 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides |
|
| Том 53, № 2 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance |
|
| Том 53, № 12 (2019) |
Physics of Semiconductor Devices |
InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) |
|
