On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm

Аннотация

The results of experimental studies of the gain properties of “thin” (3.2 nm thick) elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm are presented. The results of studying the threshold and gain characteristics of stripe laser diodes with active regions based on “thin” quantum wells with a lattice–substrate mismatch of +1.0% show that the quantum wells under study exhibit a high modal gain of 11 cm^–1 and a low transparency current density of 46 A/cm² per quantum well.