Semiconductors
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Author Details
Author Details
Shrey Arvind Singh,
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Vol 53, No 13 (2019)
Physics of Semiconductor Devices
Comparative Analysis of Double Gate Junction Less (DG JL) and Gate Stacked Double Gate Junction Less (GS DG JL) MOSFETs
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