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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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R

Rodin, P. B.
Rodin, S. N.
Rodina, A. V.
Rodionov, D. A.
Rodlovskaya, E. N.
Rodt, S.
Rodyakina, E. E.
Rogachev, M. S.
Rogacki, K.
Roginskii, E. M.
Rogl, P.
Rogozhina, G. A.
Rokakh, A. G.
Romaka, V. A.
Romanenko, A. I.
Romanov, A. E.
Romanov, I. S.
Romanov, N. M.
Romanov, V. V.
Romanova, A. Yu.
Romanova, M. V.
Romanovich, D. N.
Romashkin, A. V.
Rosanov, N. N.
Rosario, S. Rex

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