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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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G

Gadzhiev, T. M.
Gadzhieva, R. M.
Gadzhimagomedov, S. H.
Gadzhiyev, I. M.
Gagis, G. S.
Gahramanov, S. Sh.
Gaidar, G. P.
Gaiduchenko, I. A.
Gaisler, A. V.
Gaisler, V. A.
Gajiev, G. M.
Galeeva, A. V.
Galiev, G. B.
Galiev, R. R.
Galitsyn, Yu. G.
Galkin, O. E.
Gall, N. R.
Gallant, A. J.
Galstyan, V. G.
Galushka, I. V.
Galushka, V. V.
Gamzayeva, A. Yu.
Ganichev, S. D.
Ganiyev, Sabuhi
Gao, Yan Li

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