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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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G

Gapanovich, M. V.
Gaponenko, S. V.
Gaponova, D. M.
Garbačauskas, R.
Garibova, S. N.
Garkavyi, S. O.
Garmash, V. I.
Gasanova, M. S.
Gasanova, X. A.
Gaskov, A. M.
Gavrilenko, A. N.
Gavrilenko, L. V.
Gavrilenko, V. I.
Gavrilin, I. M.
Gavrilov, S. A.
Gavrina, P. S.
Gavva, V. A.
Gazaliev, A. Sh.
Gečys, P.
Gerasimenko, N. N.
Gerchikov, L. G.
Germanenko, A. V.
Gert, A. V.
Gets, D. S.
Geydt, P.

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