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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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G

Gorbunov, R. I.
Gordeev, N. Yu.
Gorelkin, V. N.
Goremychkin, E. A.
Goriachiy, D. O.
Gorlachev, E. S.
Gorlachuk, P. V.
Gornev, E. S.
Gornyi, I. V.
Gorodishcheva, A. N.
Gorokh, G. G.
Gorokhov, E. B.
Gorshenkov, M. V.
Gorshkov, A. P.
Gorshkov, D. V.
Gorshkov, O. N.
Goryachev, A. N.
Goryachev, D. N.
Govorkova, T. A.
Grabko, G. I.
Grabov, V. M.
Grachev, D. A.
Granatkina, Yu. V.
Grashchenko, A. S.
Grassano, D.

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