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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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K

Kalygulov, D. A.
Kalyuzhnyy, N. A.
Kamaev, G. N.
Kamalieva, A. N.
Kamenskaya, G. A.
Kamenskih, I. A.
Kamiliov, I. K.
Kamilov, I. K.
Kamilov, T. S.
Kaminski, V. V.
Kaminskii, V. V.
Kaminskiy, V. V.
Kaminsky, V. V.
Kamp, M.
Kamruzzaman, M.
Kamyshan, A. S.
Kan, V. E.
Kanakhin, A. A.
Kandemir, Buket Bilgen
Kandpal, Kavindra
Kanevskii, V. E.
Kanevsky, V. E.
Kang, K. N.
Kang, T. W.
Kannykin, S. V.

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