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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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K

Kapaldo, J.
Kapitonov, A. N.
Kapitonov, V. A.
Kapralova, V. M.
Karabanova, I. A.
Karabeshkin, K. V.
Karachevtseva, M. V.
Karachinsky, L. Ya.
Karakolis, P.
Karandashev, S. A.
Karaseov, P. A.
Karavaev, I. S.
Karavaev, M. B.
Karczewski, G.
Kargin, N. I.
Karimov, Khasan S.
Karlina, L. B.
Karpenkov, D. Yu.
Karpov, S. Yu.
Karpukhina, N. G.
Karpunin, V. V.
Kartashova, A. P.
Kasama, T.
Kasapoğlu, A. E.
Kasatkin, A. P.

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