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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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K

Kazanov, D. R.
Kazanskii, A. G.
Kazanskiy, N. L.
Kazantsev, D. Yu.
Kazantseva, I. A.
Kazarova, O. P.
Kazaryan, E. M.
Kazimirov, A. I.
Kažukauskas, V.
Ken, O. S.
Kerimi, M. B.
Kerimova, E. M.
Kerimova, T. G.
Khabibullin, R. A.
Khachatryan, V. A.
Khadieva, A. I.
Khadzhi, P. I.
Khaibullin, R. I.
Khainovskii, V. I.
Khairnar, A. G.
Khakhalin, I. S.
Khakhulin, D. A.
Khaldi, W.
Khamdokhov, E. Z.
Khamdokhov, Z. M.

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