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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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K

Klyui, N. I.
Knap, W.
Kniazev, K. I.
Knotko, A. V.
Knyazev, E. V.
Knyazev, S. N.
Kobylianskaya, A. K.
Kobziev, V. F.
Kocharovskaya, E. R.
Kocharovsky, V. V.
Kocharovsky, Vl. V.
Kochereshko, V. P.
Kochman, I. V.
Kochubei, S. A.
Kogai, V. Ya.
Kogan, I. V.
Kogan, L. M.
Kogdas’, M. G.
Kogotkov, V. S.
Kokolov, A. A.
Kokurin, I. A.
Kolentsova, O. S.
Kolesnik, V. V.
Koliadin, A. V.
Kollia, C.

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