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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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K

Kolobkova, E. V.
Kolodeznyi, E. S.
Kolotovkina, D. A.
Kolpakov, D. A.
Kolykhalova, E. D.
Komarov, F. F.
Komarov, V. A.
Komissarenko, F. E.
Komkov, O. S.
Konakov, A. A.
Konakova, R. V.
Konchenkov, V. I.
Kondrashin, M. A.
Kondrashov, V. A.
Kondratenko, T. S.
Konenkova, E. V.
Koniakhin, S. V.
Konnikov, S. G.
Konnova, N. Yu.
Kononov, A. A.
Kononov, N. N.
Konopko, L.
Konoplev, B. G.
Konovalov, G. G.
Konovalov, M. V.

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