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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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N

Nevolin, V. K.
Nezhdanov, A. V.
Nezhentsev, A. V.
Nezhenzev, A. V.
Nicenko, A. B.
Nichenametla, C. K.
Nichyi, S. V.
Nielsch, K.
Niftiyev, N. N.
Nikhezina, I. Yu.
Nikiforov, A. I.
Nikiforov, V. E.
Nikitenko, V. R.
Nikitin, S. E.
Nikitina, E. V.
Nikitina, I. P.
Nikitov, S. A.
Nikoghosyan, V. R.
Nikolaenko, I. V.
Nikolaenko, Yu. M.
Nikolaev, A. E.
Nikolaev, D. N.
Nikolaev, S. N.
Nikolaev, V. I.
Nikolaeva, A.

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