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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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P

Petrakov, D. S.
Petrenko, A. V.
Petrenko, N. Yu.
Petrosyan, L. S.
Petrosyan, P. G.
Petrosyan, S. I.
Petrov, A. A.
Petrov, P. V.
Petrov, S. I.
Petrov, V. N.
Petrova, L. I.
Petrova, Yu. S.
Petrovic, S.
Petrovich, V. A.
Petrushkov, M. O.
Petryakova, E. V.
Petuhov, V. A.
Petukh, A. N.
Petukhov, A. A.
Petukhov, D. I.
Petukhov, I. A.
Pevtsov, A. B.
Pezoldt, J.
Phiri, A. M.
Pikhtin, N. A.

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