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Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography
Lundin W.V., Tsatsulnikov A.F., Rodin S.N., Sakharov A.V., Usov S.O., Mitrofanov M.I., Levitskii I.V., Evtikhiev V.P.
Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method
Anisimov A.N., Wolfson A.A., Mokhov E.N.
Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas
Demir I., Altuntas I., Kasapoğlu A.E., Mobtakeri S., Gür E., Elagoz S.
Investigation of the Initial Silicon-on-Sapphire Layer Formed by CVD Techniques
Fedotov S.D., Sokolov E.M., Statsenko V.N., Romashkin A.V., Timoshenkov S.P.
Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions
Davydov V.Y., Jmerik V.N., Roginskii E.M., Kitaev Y.E., Beltukov Y.M., Smirnov M.B., Nechaev D.V., Smirnov A.N., Eliseyev I.A., Brunkov P.N., Ivanov S.V.
Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD
Aleshkin V.Y., Baidus N.V., Dubinov A.A., Kudryavtsev K.E., Nekorkin S.M., Kruglov A.V., Reunov D.G.
Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy
Gagis G.S., Levin R.V., Marichev A.E., Pushnyi B.V., Scheglov M.P., Ber B.Y., Kazantsev D.Y., Kudriavtsev Y.A., Vlasov A.S., Popova T.B., Chistyakov D.V., Kuchinskii V.I., Vasil’ev V.I.
Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties
Sorokin S.V., Avdienko P.S., Sedova I.V., Kirilenko D.A., Yagovkina M.A., Smirnov A.N., Davydov V.Y., Ivanov S.V.
Recombination in GaAs pin Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities
Mintairov M.A., Evstropov V.V., Mintairov S.A., Salii R.A., Shvarts M.Z., Kalyuzhnyy N.A.
Selective Epitaxy of Submicron GaN Structures
Lundin W.V., Tsatsulnikov A.F., Rodin S.N., Sakharov A.V., Mitrofanov M.I., Levitskii I.V., Voznyuk G.V., Evtikhiev V.P.
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers
Andreev B.A., Lobanov D.N., Krasil’nikova L.V., Bushuykin P.A., Yablonskiy A.N., Novikov A.V., Davydov V.Y., Yunin P.A., Kalinnikov M.I., Skorohodov E.V., Krasil’nik Z.F.
Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate
Seredin P.V., Goloshchapov D.L., Zolotukhin D.S., Lenshin A.S., Mizerov A.M., Arsentyev I.N., Leiste H., Rinke M.
Exciton Spectra and Energy Transfer in CdTe/ZnTe Double Quantum Wells Grown by Atomic-Layer Epitaxy
Agekyan V., Chukeev M., Karczewski G., Serov A., Filosofov N., Reznitsky A.
Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics
Yurasov D.V., Baidakova N.A., Verbus V.A., Gusev N.S., Mashin A.I., Morozova E.E., Nezhdanov A.V., Novikov A.V., Skorohodov E.V., Shengurov D.V., Yablonskiy A.N.
Specific Features of Vapor–Liquid–Solid Nanostructure Growth on the Surface of SnS Films during Plasma Treatment
Zimin S.P., Gorlachev E.S., Mokrov D.A., Amirov I.I., Gremenok V.F., Ivanov V.A.
Nonradiative Energy Transfer in Hybrid Nanostructures with Varied Dimensionality
Khrebtov A.I., Reznik R.R., Ubyivovk E.V., Litvin A.P., Skurlov I.D., Parfenov P.S., Kulagina A.S., Danilov V.V., Cirlin G.E.
Studying the Effect of Electrically Active Impurities Coming from Trimethylgallium Synthesized by Different Means on the Electrophysical Characteristics of Gallium Arsenide Epitaxial Layers
Revin M.V., Kotkov A.P., Ivanov V.A., Rad’kov Y.F., Svinkov N.V., Artemov A.N., Gribov B.G.
Study of the Structural Properties of Silicon-on-Sapphire Layers in Hydride-Chloride Vapor-Phase Epitaxy
Sokolov E.M., Fedotov S.D., Statsenko V.N., Timoshenkov S.P., Emelyanov A.V.
Predicting the Conditions for the Vapor-Phase Epitaxy of the III–V Compounds
Vigdorovich E.N.
On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures
Plankina S.M., Vikhrova O.V., Zvonkov B.N., Zubkov S.Y., Kriukov R.N., Nezhdanov A.V., Pavlov D.A., Pashen’kin I.Y., Sushkov A.A.
Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy
Gorshkov A.P., Volkova N.S., Pavlov D.A., Usov Y.V., Istomin L.A., Levichev S.B.
Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy
Lovygin M.V., Borgardt N.I., Bugaev A.S., Volkov R.L., Seibt M.
Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC
Eliseyev I.A., Davydov V.Y., Smirnov A.N., Nestoklon M.O., Dementev P.A., Lebedev S.P., Lebedev A.A., Zubov A.V., Mathew S., Pezoldt J., Bokai K.A., Usachov D.Y.
On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates
Mizerov A.M., Timoshnev S.N., Nikitina E.V., Sobolev M.S., Shubin K.Y., Berezovskaia T.N., Mokhov D.V., Lundin W.V., Nikolaev A.E., Bouravleuv A.D.
Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon
Cirlin G.E., Reznik R.R., Samsonenko Y.B., Khrebtov A.I., Kotlyar K.P., Ilkiv I.V., Soshnikov I.P., Kirilenko D.A., Kryzhanovskaya N.V.
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