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Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters
Khvostikov V.P., Kalyuzhnyy N.A., Mintairov S.A., Potapovich N.S., Sorokina S.V., Shvarts M.Z.
Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates
Kozlovskiy V.I., Krivobok V.S., Kuznetsov P.I., Nikolaev S.N., Onistchenko E.E., Pruchkina A.A., Temiryazev A.G.
Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime
Bagraev N.T., Chaikina E.I., Danilovskii E.Y., Gets D.S., Klyachkin L.E., L’vova T.V., Malyarenko A.M.
Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates
Khabibullin R.A., Yachmenev A.E., Lavrukhin D.V., Ponomarev D.S., Bugayev A.S., Maltsev P.P.
Arsenic Diffusion in the Natural Oxidation of the Heavily Defected GaAs Surface
Mikoushkin V.M., Solonitsyna A.P., Makarevskaya E.A., Novikov D.A.
Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode
Rabehi A., Bideux L., Gruzza B., Monier G., Hatem-Kacha A., Guermoui M., Ziane A., Akkal B., Benamara Z., Amrani M., Robert-Goumet C.
Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
Sokolova Z.N., Bakhvalov K.V., Lyutetskiy A.V., Pikhtin N.A., Tarasov I.S., Asryan L.V.
Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons
Kumekov S.E., Mustafin A.T., Mussatay S.S.
Halogen adsorption at an As-stabilized β2–GaAs (001)–(2 × 4) surface
Bakulin A.V., Kulkova S.E.
GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells
Dikareva N.V., Zvonkov B.N., Samartsev I.V., Nekorkin S.M., Baidus N.V., Dubinov A.A.
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates
Alekseev P.A., Dunaevskiy M.S., Mikhailov A.O., Lebedev S.P., Lebedev A.A., Ilkiv I.V., Khrebtov A.I., Bouravleuv A.D., Cirlin G.E.
Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range
Zhukov A.E., Cirlin G.E., Reznik R.R., Samsonenko Y.B., Khrebtov A.I., Kaliteevski M.A., Ivanov K.A., Kryzhanovskaya N.V., Maximov M.V., Alferov Z.I.
Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides
Borisenko S.I.
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