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卷 53, 编号 16 (2019)
Kinetics of Photoluminescence Decay of Colloidal Quantum Dots: Reversible Trapping of Photogenerated Charge Carriers
Bodunov E., Simões Gamboa A.
PDF
(Eng)
卷 52, 编号 10 (2018)
Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities
Mintairov M., Evstropov V., Mintairov S., Salii R., Shvarts M., Kalyuzhnyy N.
PDF
(Eng)
卷 53, 编号 11 (2019)
Determination of the Free Charge Carrier Concentration in Boron-Doped Silicon Nanowires Using Attenuated Total Reflection Infrared Spectroscopy
Lipkova E., Efimova A., Gonchar K., Presnov D., Eliseev A., Lapshin A., Timoshenko V.
PDF
(Eng)
卷 52, 编号 9 (2018)
Poole–Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide
Shiryaev A., Vorotyntsev V., Shobolov E.
PDF
(Eng)
卷 52, 编号 15 (2018)
Patterns of Variation in the External Quantum Efficiency of InGaN/GaN Green LEDs during Accelerated Tests
Sergeev V., Frolov I., Shirokov A., Radaev O.
PDF
(Eng)
卷 50, 编号 5 (2016)
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates
Virko M., Kogotkov V., Leonidov A., Voronenkov V., Rebane Y., Zubrilov A., Gorbunov R., Latyshev P., Bochkareva N., Lelikov Y., Tarhin D., Smirnov A., Davydov V., Shreter Y.
PDF
(Eng)
卷 52, 编号 15 (2018)
Electron Transport by a Transverse Acoustoelectric Stoneley Wave
Morocha A., Rozhkov A.
PDF
(Eng)
卷 50, 编号 5 (2016)
Radiation-stimulated processes in transistor temperature sensors
Pavlyk B., Grypa A.
PDF
(Eng)
卷 52, 编号 12 (2018)
Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers
Asryan L., Zubov F., BalezinaPolubavkina Y., Moiseev E., Muretova M., Kryzhanovskaya N., Maximov M., Zhukov A.
PDF
(Eng)
卷 50, 编号 5 (2016)
X-ray conductivity of ZnSe single crystals
Degoda V., Podust G.
PDF
(Eng)
卷 52, 编号 12 (2018)
Production of Si- and Ge-Based Thermoelectric Materials by Spark Plasma Sintering
Erofeeva I., Dorokhin M., Zdoroveyshchev A., Kuznetsov Y., Popov A., Lantsev E., Boryakov A., Kotomina V.
PDF
(Eng)
卷 50, 编号 3 (2016)
A Quasi-Classical Model of the Hubbard Gap in Lightly Compensated Semiconductors
Poklonski N., Vyrko S., Kovalev A., Zabrodskii A.
PDF
(Eng)
卷 52, 编号 12 (2018)
Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current
Akimov A., Klimov A., Epov V.
PDF
(Eng)
卷 50, 编号 3 (2016)
On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4H–SiC
Kyuregyan A.
PDF
(Eng)
卷 52, 编号 10 (2018)
Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes
Ivanov P., Potapov A., Kudoyarov M., Samsonova T.
PDF
(Eng)
卷 50, 编号 2 (2016)
Electrochemical characteristics of nanostructured silicon anodes for lithium-ion batteries
Astrova E., Li G., Rumyantsev A., Zhdanov V.
PDF
(Eng)
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