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Study of the Formation Process of Memristor Structures Based on Copper Sulfide
Belov A.N., Golishnikov A.A., Mastinin A.M., Perevalov A.A., Shevyakov V.I.
Diode Polarization and Resistive Switching in Metal/TlGaSe2 Semiconductor/Metal Devices
Seyidov M.Y., Suleymanov R.A., Şale Y., Kandemir B.B.
Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate
Tikhov S.V., Gorshkov O.N., Antonov I.N., Tetelbaum D.I., Mikhaylov A.N., Belov A.I., Morozov A.I., Karakolis P., Dimitrakis P.
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