Estimation of the Temperature of the Current Filament that Forms upon Switching in GeSbTe
- 作者: Fefelov S.A.1, Kazakova L.P.1,2, Bogoslovskiy N.A.1, Tsendin K.D.1
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隶属关系:
- Ioffe Institute
- St. Petersburg State Forest Technical University
- 期: 卷 52, 编号 12 (2018)
- 页面: 1607-1610
- 栏目: Amorphous, Vitreous, and Organic Semiconductors
- URL: https://journal-vniispk.ru/1063-7826/article/view/204805
- DOI: https://doi.org/10.1134/S1063782618120084
- ID: 204805
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详细
The current–voltage characteristics of thin-film samples of the GeSbTe system are measured in the current control mode. Voltage oscillations observed after switching are investigated. It is shown that these oscillations can be associated with the formation of a hot current filament and its gradual cooling. The size and temperatures of the current filament are estimated. It is shown that the characteristic temperature in the hot current filament corresponds to the temperature of the phase transition to the crystalline state.
作者简介
S. Fefelov
Ioffe Institute
编辑信件的主要联系方式.
Email: s.fefelov@list.ru
俄罗斯联邦, St. Petersburg, 194021
L. Kazakova
Ioffe Institute; St. Petersburg State Forest Technical University
Email: s.fefelov@list.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194021
N. Bogoslovskiy
Ioffe Institute
Email: s.fefelov@list.ru
俄罗斯联邦, St. Petersburg, 194021
K. Tsendin
Ioffe Institute
Email: s.fefelov@list.ru
俄罗斯联邦, St. Petersburg, 194021
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