Specific temperature-related features of photoconductivity relaxation in PbSnTe:In films under interband excitation


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The time dependences of variations in the photoconductivity of PbSnTe:In films in the range of T ≈ 19—25 K upon interband excitation are studied. It is found that the character of conductivity relaxation after switch-off of illumination depends on the duration and intensity of the preceding illumination. In this case, the characteristic times of relaxation for various modes of illumination can differ by more than an order of magnitude. The obtained results are discussed in the context of a model assuming the presence of a quasicontinuous spectrum of capture levels in the band gap of PbSnTe:In and also a possible effect on the parameters of these levels of the ferroelectric phase transition, the temperature of which is found to be in the temperature range under study

作者简介

A. Akimov

Rzhanov Institute of Semiconductor Physics

Email: klimov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

A. Klimov

Rzhanov Institute of Semiconductor Physics

编辑信件的主要联系方式.
Email: klimov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

I. Neizvestny

Rzhanov Institute of Semiconductor Physics

Email: klimov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

V. Shumsky

Rzhanov Institute of Semiconductor Physics

Email: klimov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

V. Epov

Rzhanov Institute of Semiconductor Physics

Email: klimov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

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