Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later)

Аннотация

The results of investigations of light-emitting diodes based on heterostructures with an InAs active region grown by liquid phase and metalorganic vapor-phase epitaxy over the last decade are reviewed. The near-field pattern, L–I and I–V characteristics, and quantum efficiency of point-contact and flip-chip light-emitting diodes are analyzed in a wide temperature range.