Мақаланы E-mail арқылы жіберу Magnetoimpedance Effect in a SOI-Based Structure
- Авторлар: Smolyakov D.A.1, Tarasov A.S.1, Yakovlev I.A.1,2, Volochaev M.N.1,2
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Мекемелер:
- Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences
- Siberian State University of Science and Technology
- Шығарылым: Том 53, № 14 (2019)
- Беттер: 1964-1966
- Бөлім: Nanostructure Devices
- URL: https://journal-vniispk.ru/1063-7826/article/view/207541
- DOI: https://doi.org/10.1134/S1063782619140215
- ID: 207541
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Аннотация
This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a wide temperature range. The influence of the magnetic field was found. We associate this effect with the influence on the surface states located at the interface, this appears as a change of the energy of their levels. This effect is enhanced by the nanoscale of the silicon channel.
Негізгі сөздер
Авторлар туралы
D. Smolyakov
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: sda88@iph.krasn.ru
Ресей, Krasnoyarsk, 660036
A. Tarasov
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: taras@iph.krasn.ru
Ресей, Krasnoyarsk, 660036
I. Yakovlev
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences; Siberian State University of Science and Technology
Хат алмасуға жауапты Автор.
Email: yia@iph.krasn.ru
Ресей, Krasnoyarsk, 660036; Krasnoyarsk, 660014
M. Volochaev
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences; Siberian State University of Science and Technology
Хат алмасуға жауапты Автор.
Email: volochaev91@mail.ru
Ресей, Krasnoyarsk, 660036; Krasnoyarsk, 660014
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