On the preparation and photoelectric properties of Tl 1– x  In 1– x  Sn  x  Se 2  ( x  = 0.1–0.25) alloys

S. P. Danylchuk; G. L. Myronchuk; M. Yu. Mozolyuk; V. V. Bozhko

doi:10.1134/S1063782616010073

On the preparation and photoelectric properties of Tl_1–xIn_1–xSn_xSe₂ (x = 0.1–0.25) alloys

作者: Danylchuk S.P.¹, Myronchuk G.L.¹, Mozolyuk M.Y.¹, Bozhko V.V.¹
隶属关系:
1. Lesya Ukrainka Eastern European National University
期: 卷 50, 编号 1 (2016)
页面: 38-42
栏目: Electronic Properties of Semiconductors
URL: https://journal-vniispk.ru/1063-7826/article/view/196680
DOI: https://doi.org/10.1134/S1063782616010073
ID: 196680

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详细

The technological conditions for growing single crystals of Tl_1–xIn_1–xSn_xSe₂ (x = 0.1–0.25) alloys are developed. The spectral distribution of the photoconductivity of the grown crystals at T = 300 K and thermally stimulated conductivity are studied. The effect of In³⁺cation substitution with Sn⁴⁺ in Tl_1–xIn_1–xSn_xSe₂ (x = 0.1–0.25) alloys on their photoelectric properties is shown.