Effect of the chemical composition of Cu–In–Ga–Se layers on the photoconductivity and conversion efficiency of CdS/CIGSe solar cells


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The effect of the [Ga]/[In+Ga] ratio of gallium and indium on the microwave photoconductivity of Cu–In–Ga–Se (CIGSe) films and on the efficiency of solar cells fabricated in accordance with the same technology is investigated. According to the observations of a field-emission scanning electron microscopy (FESEM), the grain size decreases with increasing Ga content. With increasing gallium content in the samples, the photogenerated-electron lifetime and the activation energy of the microwave photoconductivity also decrease. The changes in the activation energy of the through conduction in darkness are less than 20%. Analysis of the obtained data shows that the known effect of the gallium gradient on the efficiency should be associated with modification of the internal structure of grains instead of with their boundaries.

Sobre autores

G. Novikov

Institute of Problems of Chemical Physics

Autor responsável pela correspondência
Email: ngf@icp.ac.ru
Rússia, Chernogolovka, 142432

Wei-Tao Tsai

Department of Electronic Engineering

Email: ngf@icp.ac.ru
República da China, Taoyuan

K. Bocharov

Institute of Problems of Chemical Physics

Email: ngf@icp.ac.ru
Rússia, Chernogolovka, 142432

E. Rabenok

Institute of Problems of Chemical Physics

Email: ngf@icp.ac.ru
Rússia, Chernogolovka, 142432

Ming-Jer Jeng

Department of Electronic Engineering

Email: ngf@icp.ac.ru
República da China, Taoyuan

Liann-Be Chang

Department of Electronic Engineering

Email: ngf@icp.ac.ru
República da China, Taoyuan

Wu-Shiung Feng

Institute of Problems of Chemical Physics

Email: ngf@icp.ac.ru
Rússia, Chernogolovka, 142432

Jian-Ping Ao

Institute of Photoelectronic Thin Film Device and Technology

Email: ngf@icp.ac.ru
República Popular da China, Tianjin

Yun Sun

Institute of Photoelectronic Thin Film Device and Technology

Email: ngf@icp.ac.ru
República Popular da China, Tianjin

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