| 期 |
标题 |
文件 |
| 卷 53, 编号 13 (2019) |
Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications |
(Eng)
|
|
Chugh N., Kumar M., Bhattacharya M., Gupta R.
|
| 卷 53, 编号 13 (2019) |
Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells |
(Eng)
|
|
Chen X., Zhao B., Li S.
|
| 卷 53, 编号 13 (2019) |
Analytical Modeling of Surface Potential and Drain Current of Hetero-Dielectric DG TFET and Its Analog and Radio-Frequency Performance Evaluation |
(Eng)
|
|
Patel S., Kumar D., Chaurasiya N., Tripathi S.
|
| 卷 53, 编号 13 (2019) |
Comparative Analysis of Double Gate Junction Less (DG JL) and Gate Stacked Double Gate Junction Less (GS DG JL) MOSFETs |
(Eng)
|
|
Shrey Arvind Singh ., Shweta Tripathi .
|
| 卷 53, 编号 12 (2019) |
On the Application of Schottky Contacts in the Microwave, Extremely High Frequency, and THz Ranges |
(Eng)
|
|
Torkhov N., Babak L., Kokolov A.
|
| 卷 53, 编号 12 (2019) |
InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) |
(Eng)
|
|
Nadtochiy A., Shchukin V., Cherkashin N., Denneulin T., Zhukov A., Maximov M., Gordeev N., Payusov A., Kulagina M., Shernyakov Y., Ledentsov N.
|
| 卷 53, 编号 12 (2019) |
Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters |
(Eng)
|
|
Karlina L., Vlasov A., Shvarts M., Soshnikov I., Smirnova I., Komissarenko F., Ankudinov A.
|
| 卷 53, 编号 12 (2019) |
GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells |
(Eng)
|
|
Dikareva N., Zvonkov B., Samartsev I., Nekorkin S., Baidus N., Dubinov A.
|
| 卷 53, 编号 11 (2019) |
Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells |
(Eng)
|
|
Mintairov M., Evstropov V., Mintairov S., Shvarts M., Kalyuzhnyy N.
|
| 卷 53, 编号 11 (2019) |
High-Voltage AlInGaN LED Chips |
(Eng)
|
|
Markov L., Kukushkin M., Pavlyuchenko A., Smirnova I., Itkinson G., Osipov O.
|
| 卷 53, 编号 10 (2019) |
Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels |
(Eng)
|
|
Gordeev N., Payusov A., Maximov M.
|
| 卷 53, 编号 10 (2019) |
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes |
(Eng)
|
|
Lebedev A., Kozlovski V., Ivanov P., Levinshtein M., Zubov A.
|
| 卷 53, 编号 8 (2019) |
Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation |
(Eng)
|
|
Blokhin S., Kulagina M., Guseva Y., Mintairov S., Kalyuzhnyy N., Mozharov A., Zubov F., Maximov M., Zhukov A., Moiseev E., Kryzhanovskaya N.
|
| 卷 53, 编号 8 (2019) |
Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers |
(Eng)
|
|
Blokhin S., Bobrov M., Blokhin A., Kuzmenkov A., Maleev N., Ustinov V., Kolodeznyi E., Rochas S., Babichev A., Novikov I., Gladyshev A., Karachinsky L., Denisov D., Voropaev K., Ionov A., Egorov A.
|
| 卷 53, 编号 8 (2019) |
Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters |
(Eng)
|
|
Khvostikov V., Kalyuzhnyy N., Mintairov S., Potapovich N., Sorokina S., Shvarts M.
|
| 卷 53, 编号 8 (2019) |
Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass |
(Eng)
|
|
Abolmasov S., Abramov A., Semenov A., Shakhray I., Terukov E., Malchukova E., Trapeznikova I.
|
| 卷 53, 编号 7 (2019) |
High-Voltage Diffused Step Recovery Diodes: I. Numerical Simulation |
(Eng)
|
|
Kyuregyan A.
|
| 卷 53, 编号 7 (2019) |
High-Voltage Diffused Step Recovery Diodes: II. Theory |
(Eng)
|
|
Kyuregyan A.
|
| 卷 53, 编号 7 (2019) |
Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons |
(Eng)
|
|
Korolkov O., Kozlovski V., Lebedev A., Sleptsuk N., Toompuu J., Rang T.
|
| 卷 53, 编号 6 (2019) |
Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO2 (λ = 4.3 μm) and CO (λ = 4.7 μm) Detection |
(Eng)
|
|
Romanov V., Belykh I., Ivanov E., Alekseev P., Il’inskaya N., Yakovlev Y.
|
| 卷 53, 编号 6 (2019) |
Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers |
(Eng)
|
|
Podoskin A., Romanovich D., Shashkin I., Gavrina P., Sokolova Z., Slipchenko S., Pikhtin N.
|
| 卷 53, 编号 6 (2019) |
Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer |
(Eng)
|
|
Banshchikov A., Illarionov Y., Vexler M., Wachter S., Sokolov N.
|
| 卷 53, 编号 6 (2019) |
Simulation Approach to Modeling of the Avalanche Breakdown of a p–n Junction |
(Eng)
|
|
Shashkina A., Hanin S.
|
| 卷 53, 编号 6 (2019) |
Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers |
(Eng)
|
|
Kalinina E., Violina G., Nikitina I., Yagovkina M., Ivanova E., Zabrodski V.
|
| 卷 53, 编号 6 (2019) |
Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation |
(Eng)
|
|
Ivanov P., Kudoyarov M., Potapov A., Samsonova T.
|
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