| Шығарылым |
Атауы |
Файл |
| Том 53, № 13 (2019) |
Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications |
(Eng)
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Chugh N., Kumar M., Bhattacharya M., Gupta R.
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| Том 53, № 13 (2019) |
Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells |
(Eng)
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Chen X., Zhao B., Li S.
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| Том 53, № 13 (2019) |
Analytical Modeling of Surface Potential and Drain Current of Hetero-Dielectric DG TFET and Its Analog and Radio-Frequency Performance Evaluation |
(Eng)
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Patel S., Kumar D., Chaurasiya N., Tripathi S.
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| Том 53, № 13 (2019) |
Comparative Analysis of Double Gate Junction Less (DG JL) and Gate Stacked Double Gate Junction Less (GS DG JL) MOSFETs |
(Eng)
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Shrey Arvind Singh ., Shweta Tripathi .
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| Том 53, № 12 (2019) |
On the Application of Schottky Contacts in the Microwave, Extremely High Frequency, and THz Ranges |
(Eng)
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Torkhov N., Babak L., Kokolov A.
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| Том 53, № 12 (2019) |
InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) |
(Eng)
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Nadtochiy A., Shchukin V., Cherkashin N., Denneulin T., Zhukov A., Maximov M., Gordeev N., Payusov A., Kulagina M., Shernyakov Y., Ledentsov N.
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| Том 53, № 12 (2019) |
Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters |
(Eng)
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Karlina L., Vlasov A., Shvarts M., Soshnikov I., Smirnova I., Komissarenko F., Ankudinov A.
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| Том 53, № 12 (2019) |
GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells |
(Eng)
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Dikareva N., Zvonkov B., Samartsev I., Nekorkin S., Baidus N., Dubinov A.
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| Том 53, № 11 (2019) |
High-Voltage AlInGaN LED Chips |
(Eng)
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Markov L., Kukushkin M., Pavlyuchenko A., Smirnova I., Itkinson G., Osipov O.
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| Том 53, № 11 (2019) |
Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells |
(Eng)
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Mintairov M., Evstropov V., Mintairov S., Shvarts M., Kalyuzhnyy N.
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| Том 53, № 10 (2019) |
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes |
(Eng)
|
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Lebedev A., Kozlovski V., Ivanov P., Levinshtein M., Zubov A.
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| Том 53, № 10 (2019) |
Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels |
(Eng)
|
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Gordeev N., Payusov A., Maximov M.
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| Том 53, № 8 (2019) |
Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation |
(Eng)
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Blokhin S., Kulagina M., Guseva Y., Mintairov S., Kalyuzhnyy N., Mozharov A., Zubov F., Maximov M., Zhukov A., Moiseev E., Kryzhanovskaya N.
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| Том 53, № 8 (2019) |
Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers |
(Eng)
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Blokhin S., Bobrov M., Blokhin A., Kuzmenkov A., Maleev N., Ustinov V., Kolodeznyi E., Rochas S., Babichev A., Novikov I., Gladyshev A., Karachinsky L., Denisov D., Voropaev K., Ionov A., Egorov A.
|
| Том 53, № 8 (2019) |
Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters |
(Eng)
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Khvostikov V., Kalyuzhnyy N., Mintairov S., Potapovich N., Sorokina S., Shvarts M.
|
| Том 53, № 8 (2019) |
Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass |
(Eng)
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Abolmasov S., Abramov A., Semenov A., Shakhray I., Terukov E., Malchukova E., Trapeznikova I.
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| Том 53, № 7 (2019) |
High-Voltage Diffused Step Recovery Diodes: I. Numerical Simulation |
(Eng)
|
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Kyuregyan A.
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| Том 53, № 7 (2019) |
High-Voltage Diffused Step Recovery Diodes: II. Theory |
(Eng)
|
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Kyuregyan A.
|
| Том 53, № 7 (2019) |
Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons |
(Eng)
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Korolkov O., Kozlovski V., Lebedev A., Sleptsuk N., Toompuu J., Rang T.
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| Том 53, № 6 (2019) |
Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO2 (λ = 4.3 μm) and CO (λ = 4.7 μm) Detection |
(Eng)
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Romanov V., Belykh I., Ivanov E., Alekseev P., Il’inskaya N., Yakovlev Y.
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| Том 53, № 6 (2019) |
Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers |
(Eng)
|
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Podoskin A., Romanovich D., Shashkin I., Gavrina P., Sokolova Z., Slipchenko S., Pikhtin N.
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| Том 53, № 6 (2019) |
Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer |
(Eng)
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Banshchikov A., Illarionov Y., Vexler M., Wachter S., Sokolov N.
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| Том 53, № 6 (2019) |
Simulation Approach to Modeling of the Avalanche Breakdown of a p–n Junction |
(Eng)
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Shashkina A., Hanin S.
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| Том 53, № 6 (2019) |
Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers |
(Eng)
|
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Kalinina E., Violina G., Nikitina I., Yagovkina M., Ivanova E., Zabrodski V.
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| Том 53, № 6 (2019) |
Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation |
(Eng)
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Ivanov P., Kudoyarov M., Potapov A., Samsonova T.
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| Нәтижелер 198 - 1/25 |
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