Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor
- Авторлар: Sovtus N.V.1, Mynbaev K.D.1
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Мекемелер:
- Ioffe Institute
- Шығарылым: Том 53, № 12 (2019)
- Беттер: 1651-1655
- Бөлім: Amorphous, Vitreous, and Organic Semiconductors
- URL: https://journal-vniispk.ru/1063-7826/article/view/207389
- DOI: https://doi.org/10.1134/S1063782619160279
- ID: 207389
Дәйексөз келтіру
Аннотация
The heat-conduction equation describing the current cord in a semiconductor is approximately solved for a Ge–Sb–Te semiconductor system of cylindrical configuration. It is shown that the cord current at infinitely long times is proportional to the squared maximum temperature at the cord center and inversely proportional to the applied electric field. The scale of the lateral current perpendicular to the main cord current is estimated. It is found that the lateral current is low in comparison with the cord current; hence, the formation of lateral cords growing from the main cord is highly improbable.
Негізгі сөздер
Авторлар туралы
N. Sovtus
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: spnick93@mail.ru
Ресей, St. Petersburg, 194021
K. Mynbaev
Ioffe Institute
Email: spnick93@mail.ru
Ресей, St. Petersburg, 194021
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