电邮这篇文章 Temperature dependence of the hall coefficient in the Вi1–xSbx System (x = 0.06, 0.12)
- 作者: Tairov B.A.1, Gasanova X.A.1, Selim-zade R.I.1
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隶属关系:
- Abdullaev Institute of Physics
- 期: 卷 50, 编号 8 (2016)
- 页面: 996-1000
- 栏目: Electronic Properties of Semiconductors
- URL: https://journal-vniispk.ru/1063-7826/article/view/197544
- DOI: https://doi.org/10.1134/S1063782616080248
- ID: 197544
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详细
The temperature dependences of the Fermi level, concentrations of charge carriers, and their effective mass ratio in the Bi1–xSbx system (x = 0.06, 0.12) are determined on the basis of quantitative analysis of the temperature dependence of the Hall coefficient in the temperature range of 77–300 K.
作者简介
B. Tairov
Abdullaev Institute of Physics
编辑信件的主要联系方式.
Email: btairov@physics.ab.az
阿塞拜疆, Baku, Az-1143
X. Gasanova
Abdullaev Institute of Physics
Email: btairov@physics.ab.az
阿塞拜疆, Baku, Az-1143
R. Selim-zade
Abdullaev Institute of Physics
Email: btairov@physics.ab.az
阿塞拜疆, Baku, Az-1143
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