High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: II. Energy efficiency

Аннотация

The energy efficiency of optoelectronic switches based on high-voltage silicon photodiodes, phototransistors, and photothyristors controlled by picosecond laser pulses during the formation of voltage pulses on resistive load R_L is studied for the first time. It is shown that at the given values of the resistive load R_L, pulse amplitude U_R and duration t_R, there exist optimum device areas, energies, and absorbances of control radiation providing a maximum total switch efficiency of ~0.92. All three switch types feature almost the same efficiency at short t_R; at longer t_R, photothyristors have a noticeable advantage.