Electrical Breakdown in Pure n- and p-Si
- Авторы: Bannaya V.F.1, Nikitina E.V.2
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Учреждения:
- Moscow State University of Education
- Russian Peoples’ Friendship University
- Выпуск: Том 52, № 3 (2018)
- Страницы: 273-277
- Раздел: Electronic Properties of Semiconductors
- URL: https://journal-vniispk.ru/1063-7826/article/view/202516
- DOI: https://doi.org/10.1134/S1063782618030065
- ID: 202516
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Аннотация
The results of calculations of the dependences of the kinetic coefficients of impact ionization and thermal recombination on an electric field in pure silicon are presented. By analogy with germanium, the dependences of the breakdown field Еbr on the material compensation ratio K are calculated. The validity of such calculation is justified in detail. The Еbr(K) curves are presented and compared with experimental data in the weak-compensation region. Matching with experimental results at which satisfactory agreement between theory and experiment is observed is performed.
Об авторах
V. Bannaya
Moscow State University of Education
Email: enikitina@sci.edu.ru
Россия, ul. Malaya Pirogovskaya 1/1, Moscow, 119991
E. Nikitina
Russian Peoples’ Friendship University
Автор, ответственный за переписку.
Email: enikitina@sci.edu.ru
Россия, ul. Miklukho-Maklaya 6, Moscow, 117198
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