Отправить статью по E-mail Measurement of the Charge-Carrier Mobility in Gallium Arsenide Using a Near-Field Microwave Microscope by the Microwave-Magnetoresistance Method
- Авторы: Usanov D.A.1, Postelga A.E.1, Kalyamin A.A.1, Sharov I.V.1
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Учреждения:
- National Research Saratov State University named after N.G. Chernyshevsky
- Выпуск: Том 52, № 13 (2018)
- Страницы: 1669-1671
- Раздел: Electronic Properties of Semiconductors
- URL: https://journal-vniispk.ru/1063-7826/article/view/204851
- DOI: https://doi.org/10.1134/S1063782618130195
- ID: 204851
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Аннотация
The possibility of contactless nondestructive local measurements of the microwave carrier mobility in gallium arsenide using a near-field scanning microwave microscope and the effect of microwave magnetoresistance is shown. The need to consider the effect of a shift of the microwave field in processing the result of the measurements is noted.
Об авторах
D. Usanov
National Research Saratov State University named after N.G. Chernyshevsky
Email: alexey-gtp@mail.ru
Россия, Saratov, 410012
A. Postelga
National Research Saratov State University named after N.G. Chernyshevsky
Email: alexey-gtp@mail.ru
Россия, Saratov, 410012
A. Kalyamin
National Research Saratov State University named after N.G. Chernyshevsky
Автор, ответственный за переписку.
Email: alexey-gtp@mail.ru
Россия, Saratov, 410012
I. Sharov
National Research Saratov State University named after N.G. Chernyshevsky
Email: alexey-gtp@mail.ru
Россия, Saratov, 410012
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