Measurement of the Charge-Carrier Mobility in Gallium Arsenide Using a Near-Field Microwave Microscope by the Microwave-Magnetoresistance Method

D. A. Usanov; A. E. Postelga; A. A. Kalyamin; I. V. Sharov

doi:10.1134/S1063782618130195

Measurement of the Charge-Carrier Mobility in Gallium Arsenide Using a Near-Field Microwave Microscope by the Microwave-Magnetoresistance Method

Authors: Usanov D.A.¹, Postelga A.E.¹, Kalyamin A.A.¹, Sharov I.V.¹
Affiliations:
1. National Research Saratov State University named after N.G. Chernyshevsky
Issue: Vol 52, No 13 (2018)
Pages: 1669-1671
Section: Electronic Properties of Semiconductors
URL: https://journal-vniispk.ru/1063-7826/article/view/204851
DOI: https://doi.org/10.1134/S1063782618130195
ID: 204851

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
About the authors
References
Supplementary files
Statistics

Abstract

The possibility of contactless nondestructive local measurements of the microwave carrier mobility in gallium arsenide using a near-field scanning microwave microscope and the effect of microwave magnetoresistance is shown. The need to consider the effect of a shift of the microwave field in processing the result of the measurements is noted.