Effect of Hydrostatic Pressure on the Static Permittivity of Germanium
- 作者: Musaev A.M.1
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隶属关系:
- Institute of Physics, Dagestan Scientific Center
- 期: 卷 52, 编号 1 (2018)
- 页面: 31-33
- 栏目: Electronic Properties of Semiconductors
- URL: https://journal-vniispk.ru/1063-7826/article/view/202214
- DOI: https://doi.org/10.1134/S1063782618010141
- ID: 202214
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详细
The dependence of the static permittivity of single-crystal germanium on hydrostatic pressure up to P ≈ 7.4 GPa is studied experimentally. As the pressure is increased to P ≈ 4 GPa, the permittivity of Ge decreases by a factor of ~13 to ε = 1.22. As the pressure is increased further to P ≈ 7 GPa, a moderate increase in ε to the initial value is observed. In the range 7–7.4 GPa, the permittivity increases to a value larger than 1000. The experimental dependences obtained in the study substantially differ from the previously known dependences.
作者简介
A. Musaev
Institute of Physics, Dagestan Scientific Center
编辑信件的主要联系方式.
Email: akhmed-musaev@yandex.ru
俄罗斯联邦, Makhachkala, 367003
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