Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing
- 作者: Vasev A.V.1, Putyato M.A.1, Preobrazhenskii V.V.1, Bakarov A.K.1, Toropov A.I.1
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隶属关系:
- Institute of Semiconductor Physics
- 期: 卷 52, 编号 5 (2018)
- 页面: 664-666
- 栏目: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
- URL: https://journal-vniispk.ru/1063-7826/article/view/203337
- DOI: https://doi.org/10.1134/S1063782618050354
- ID: 203337
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详细
The dynamics of processes of antimony desorption was investigated on the singular and vicinal GaSb(001) surface by RHEED method. The role of the terraces edges was determined during antimony evaporation in Langmuir desorption mode. It is shown that the structural transition (2 × 5) → (1 × 3) is a complex of two transitions—order → disorder and disorder → order. The influence of the degree of surface miscut from the singular face on the dimension of the transition (2 × 5) → DO was studied. The activation energies of structural transitions ex(2 × 5) → (2 × 5), (2 × 5) → DO and DO → (1 × 3) on singular and vicinal faces GaSb(001) were determined.
作者简介
A. Vasev
Institute of Semiconductor Physics
编辑信件的主要联系方式.
Email: vasev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
M. Putyato
Institute of Semiconductor Physics
Email: vasev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
V. Preobrazhenskii
Institute of Semiconductor Physics
Email: vasev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Bakarov
Institute of Semiconductor Physics
Email: vasev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Toropov
Institute of Semiconductor Physics
Email: vasev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
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