Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing

详细

The dynamics of processes of antimony desorption was investigated on the singular and vicinal GaSb(001) surface by RHEED method. The role of the terraces edges was determined during antimony evaporation in Langmuir desorption mode. It is shown that the structural transition (2 × 5) → (1 × 3) is a complex of two transitions—orderdisorder and disorder → order. The influence of the degree of surface miscut from the singular face on the dimension of the transition (2 × 5) → DO was studied. The activation energies of structural transitions ex(2 × 5) → (2 × 5), (2 × 5) → DO and DO → (1 × 3) on singular and vicinal faces GaSb(001) were determined.

作者简介

A. Vasev

Institute of Semiconductor Physics

编辑信件的主要联系方式.
Email: vasev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

M. Putyato

Institute of Semiconductor Physics

Email: vasev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

V. Preobrazhenskii

Institute of Semiconductor Physics

Email: vasev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

A. Bakarov

Institute of Semiconductor Physics

Email: vasev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

A. Toropov

Institute of Semiconductor Physics

Email: vasev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

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