Size Dependence of the Melting Point of Silicon Nanoparticles: Molecular Dynamics and Thermodynamic Simulation
- Авторлар: Dronnikov V.V.1, Talyzin I.V.1, Samsonov M.V.1, Samsonov V.M.1, Pushkar M.Y.1
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Мекемелер:
- Tver State University
- Шығарылым: Том 53, № 7 (2019)
- Беттер: 947-953
- Бөлім: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journal-vniispk.ru/1063-7826/article/view/206521
- DOI: https://doi.org/10.1134/S1063782619070236
- ID: 206521
Дәйексөз келтіру
Аннотация
The size dependence of the melting point of Si nanoparticles is investigated using molecular dynamics and thermodynamic simulation based on the Thomson’s formula. The atomistic modeling data obtained using the Stillinger–Weber potential agree with the results reported by other authors and thermodynamic-simulation data and predict a decrease in the melting point Tm of Si nanoparticles with an increase in their reciprocal radius R–1 according to linear law. The available experimental data predict lower Tm values, including the limiting value \(T_{m}^{{(\infty )}}\), which corresponds to the linear extrapolation of experimental points to R–1 → 0 (to the radius R → ∞); the underestimation is 200–300 K as compared with the reference melting point of silicon (1688 K). It is concluded that the molecular-dynamics data on Tm(R–1) obtained using the Stillinger–Weber potential are more adequate than the available experimental data.
Авторлар туралы
V. Dronnikov
Tver State University
Email: samsonoff@inbox.ru
Ресей, Tver, 170100
I. Talyzin
Tver State University
Email: samsonoff@inbox.ru
Ресей, Tver, 170100
M. Samsonov
Tver State University
Email: samsonoff@inbox.ru
Ресей, Tver, 170100
V. Samsonov
Tver State University
Хат алмасуға жауапты Автор.
Email: samsonoff@inbox.ru
Ресей, Tver, 170100
M. Pushkar
Tver State University
Email: samsonoff@inbox.ru
Ресей, Tver, 170100
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