Study of electrical resistivity of semiconductor SmS in the absence of a metallic phase on the surface

Abstract

The temperature dependences of the electrical resistivity of samarium monosulfide single-crystal samples subjected to chemical treatment to remove a metallic phase from their surfaces have been measured in the range of 1.5–400 K at atmospheric pressure and at a pressure of 0.3 GPa. The temperature dependences of the activation energy of conduction electrons at these pressures and the piezoresistance coefficient of uniform compression have been calculated. It has been shown that the known model of the structure of the impurity-level spectrum in SmS remains partially valid at temperatures higher than 15 K. At lower temperatures, the existence of shallow donor centers in SmS and the hopping conduction over them should be taken into account.