| Issue |
Title |
File |
| Vol 61, No 12 (2019) |
Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates |
(Eng)
|
|
Mizerov A.M., Kukushkin S.A., Sharofidinov S.S., Osipov A.V., Timoshnev S.N., Shubina K.Y., Berezovskaya T.N., Mokhov D.V., Buravlev A.D.
|
| Vol 61, No 12 (2019) |
Studies of Thermoelectric Properties of Superlattices Based on Manganese Silicide and Germanium |
(Eng)
|
|
Dorokhin M.V., Kuznetsov Y.M., Lesnikov V.P., Zdoroveyshchev A.V., Demina P.B., Erofeeva I.V.
|
| Vol 61, No 12 (2019) |
Photoemission Studies of the Electronic Structure of GaN Grown by Plasma Assisted Molecular Beam Epitaxy |
(Eng)
|
|
Timoshnev S.N., Mizerov A.M., Benemanskaya G.V., Kukushkin S.A., Buravlev A.D.
|
| Vol 61, No 12 (2019) |
Effect of Solid-State Epitaxial Recrystallization on Defect Density in Ultrathin Silicon-on-Sapphire Layers |
(Eng)
|
|
Fedotov S.D., Statsenko V.N., Egorov N.N., Golubkov S.A.
|
| Vol 61, No 12 (2019) |
Growing Bulk Aluminum Nitride and Gallium Nitride Crystals by the Sublimation Sandwich Method |
(Eng)
|
|
Mokhov E.N., Wol’fson A.A., Kazarova O.P.
|
| Vol 61, No 12 (2019) |
Features of Forming the Electronic Structure at Synthesis of Ti2AlC, Ti2AlN, Ti2SiC, and Ti2SiN Compounds |
(Eng)
|
|
Zavodinskii V.G., Gorkusha O.A.
|
| Vol 61, No 12 (2019) |
On Thermomigration Velocity of Liquid Cylindrical Inclusions in a Crystal under Stationary Thermal Conditions |
(Eng)
|
|
Garmashov S.I.
|
| Vol 61, No 12 (2019) |
High Resolution Investigation on the NiAu Ohmic Contact to p-AlGaN|GaN Heterostructure |
(Eng)
|
|
Zheng-Fei Hu ., Li X., Zhang Y.
|
| Vol 61, No 12 (2019) |
Dependence of Properties of Variable Gradient Porous Structures of Silicon on the Method of Formation |
(Eng)
|
|
Rubtsova K.I., Silina M.D.
|
| Vol 61, No 12 (2019) |
Effect of Gamma Irradiation on Conductivity of Cd1 – xFexTe |
(Eng)
|
|
Mehrabova M.A., Nuriyev H.R., Orujov H.S., Hasanov N.H., Kerimova T.I., Abdullayeva A.A., Kazimova A.I.
|
| Vol 61, No 12 (2019) |
Study of Elastic Properties of SiC Films Synthesized on Si Substrates by the Method of Atomic Substitution |
(Eng)
|
|
Grashchenko A.S., Kukushkin S.A., Osipov A.V.
|
| Vol 61, No 12 (2019) |
Impact of Elastic Stress on Crystal Phase of GaP Nanowires |
(Eng)
|
|
Sibirev N.V., Berdnikov Y.S., Sibirev V.N.
|
| Vol 61, No 12 (2019) |
Dislocation Reactions in a Semipolar Gallium Nitride Layer Grown on a Vicinal Si(001) Substrate Using Aluminum Nitride and 3C–SiC Buffer Layers |
(Eng)
|
|
Sorokin L.M., Gutkin M.Y., Myasoedov A.V., Kalmykov A.E., Bessolov V.N., Kukushkin S.A.
|
| Vol 61, No 12 (2019) |
Growth Anisotropy and Crystal Structure of Linear Conjugated Oligomers |
(Eng)
|
|
Postnikov V.A., Lyasnikova M.S., Kulishov A.A., Sorokina N.I., Voloshin A.E., Skorotetcky M.S., Borshchev O.V., Ponomarenko S.A.
|
| Vol 61, No 12 (2019) |
Formation of AgInS2/ZnS Colloidal Nanocrystals and Their Photoluminescence Properties |
(Eng)
|
|
Korepanov O.A., Mazing D.S., Aleksandrova O.A., Moshnikov V.A., Komolov A.S., Lazneva E.F., Kirilenko D.A.
|
| Vol 61, No 12 (2019) |
Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface |
(Eng)
|
|
Kozhukhov A.S., Aleksandrov I.A., Rzheutski N.V., Lebiadok E.V., Razumets E.A., Zhuravlev K.S., Milakhin D.S., Malin T.V., Mansurov V.G., Galitsyn Y.G.
|
| Vol 61, No 12 (2019) |
GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography |
(Eng)
|
|
Rodin S.N., Lundin W.V., Tsatsulnikov A.F., Sakharov A.V., Usov S.O., Mitrofanov M.I., Levitskii I.V., Evtikhiev V.P., Kaliteevski M.A.
|
| Vol 61, No 12 (2019) |
Mechanism of Diffusion of Carbon and Silicon Monooxides in a Cubic Silicon Carbide Crystal |
(Eng)
|
|
Kukushkin S.A., Osipov A.V.
|
| Vol 61, No 12 (2019) |
A New Method of Growing AlN, GaN, and AlGaN Bulk Crystals Using Hybrid SiC/Si Substrates |
(Eng)
|
|
Kukushkin S.A., Sharofidinov S.S.
|
| Vol 61, No 11 (2019) |
The Dipole Ordering and the Ionic Conductivity in the NASICON-Like Structures of the Na3Sc2(PO4)3 Type |
(Eng)
|
|
Nogai A.S., Nogai A.A., Stefanovich S.Y., Solikhodzha Z.M., Uskenbaev D.E.
|
| Vol 61, No 11 (2019) |
Electronic Structure of Molybdenum Oxidized in Air |
(Eng)
|
|
Dement’ev P.A., Ivanova E.V., Lapushkin M.N., Smirnov D.A., Timoshnev S.N.
|
| Vol 61, No 11 (2019) |
Effect of the Chemical Composition of TlIn1 – xErxS2 (0 ≤ x ≤ 0.01) Crystals on Their Dielectric Characteristics and the Parameters of Localized States |
(Eng)
|
|
Mustafaeva S.N., Asadov M.M.
|
| Vol 61, No 11 (2019) |
The Impurity Magnetic Susceptibility of Semiconductors in the Case of Direct Exchange Interaction in the Ising Model |
(Eng)
|
|
Bogoslovskiy N.A., Petrov P.V., Averkiev N.S.
|
| Vol 61, No 11 (2019) |
Photoluminescence of Cu2O Crystals of Different Origins |
(Eng)
|
|
Agekyan V.F., Serov A.Y., Filosofov N.G.
|
| Vol 61, No 10 (2019) |
The Influence of Electron Irradiation on the Dielectric Characteristics of Single Crystals of AgGaSe2 |
(Eng)
|
|
Sheleg A.U., Hurtavy V.G.
|
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