Modification of the properties of ferromagnetic layers based on A3B5 compounds by pulsed laser annealing

Abstract

Laser annealing experiments were performed in order to increase the concentration of electrically active manganese in the layers of A³B⁵: Mn semiconductors. An LPX-200 KrF excimer laser with a wavelength of 248 nm and a pulse duration of ~30 ns was used. It is shown experimentally that at a pulse energy of an excimer laser of >230 mJ/cm², the hole concentration in GaAs: Mn layers increases to 3 × 10²⁰ cm^–3. The negative magnetoresistance and the anomalous Hall effect with a hysteresis loop for annealed GaAs: Mn samples remain the same up to 80–100 K. Similar changes are observed for InAs: Mn layers as a result of laser annealing.