Email this article Dielectric Losses and Charge Transfer in Antimony-Doped TlGaS2 Single Crystal
- Authors: Asadov S.M.1, Mustafaeva S.N.2
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Affiliations:
- Institute of Catalysis and Inorganic Chemistry named after Academician M. Nagiyev
- Institute of Physics, Azerbaijan National Academy of Sciences
- Issue: Vol 60, No 3 (2018)
- Pages: 499-503
- Section: Semiconductors
- URL: https://journal-vniispk.ru/1063-7834/article/view/202292
- DOI: https://doi.org/10.1134/S1063783418030034
- ID: 202292
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Abstract
Effect of semimetallic antimony (0.5 mol % Sb) on the dielectric properties and ac-conductivity of TlGaS2-based single crystals grown by the Bridgman–Stockbarger method has been studied. The experimental results on the frequency dispersion of dielectric coefficients and the conductivity of TlGa0.995Sb0.005S2 single crystals allowed the revealing of the dielectric loss nature, the charge transfer mechanism, and the estimation of the parameters of the states localized in the energy gap. The antimony-doping of the TlGaS2 single crystal leads to an increase in the density of states near the Fermi level and a decrease in the average time and average distance of hopes.
About the authors
S. M. Asadov
Institute of Catalysis and Inorganic Chemistry named after Academician M. Nagiyev
Email: solmust@gmail.com
Azerbaijan, pr. H. Javid 113, Baku, AZ1143
S. N. Mustafaeva
Institute of Physics, Azerbaijan National Academy of Sciences
Author for correspondence.
Email: solmust@gmail.com
Azerbaijan, pr. H. Javid 131, Baku, AZ1141
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