Effect of Laser Fluence on Magnetic Properties of Thin MnxSi1 – x (x ≈ 0.5) Films Prepared by Pulsed Laser Deposition
- 作者: Drovosekov A.B.1, Savitsky A.O.1,2, Kreines N.M.1, Rylkov V.V.3,4, Nikolaev S.N.3, Chernoglazov K.Y.3, Taldenkov A.N.3, Cherebylo E.A.5, Mikhalevskii V.A.5, Novodvorskii O.A.5, Maslakov K.I.6, Pandey P.7, Zhou S.7
- 
							隶属关系: 
							- Kapitza Institute for Physical Problems, Russian Academy of Sciences
- Institute of Solid State Physics, Russian Academy of Sciences
- National Research Centre Kurchatov Institute
- Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino Branch
- Institute on Laser and Information Technologies, Branch of the Federal Scientific Research Centre “Crystallography and Photonics,” Russian Academy of Sciences
- Moscow State University
- Helmholtz-Zentrum Dresden–Rossendorf, Institute of Ion Beam Physics and Materials Research
 
- 期: 卷 60, 编号 11 (2018)
- 页面: 2188-2193
- 栏目: Semiconductors
- URL: https://journal-vniispk.ru/1063-7834/article/view/204272
- DOI: https://doi.org/10.1134/S1063783418110045
- ID: 204272
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Abstract—The effect of laser pulse energy E on the possibility of forming of a homogeneous “high-temperature” ferromagnetic phase in MnxSi1 – x (x ≈ 0.5) alloy films grown by pulsed laser deposition onto an Al2O3 (0001) substrate has been studied. The high-temperature phase with manganese concentration x ≈ 0.53 and the Curie temperature TC ~ 200–300 K is shown to form near the substrate at the initial stage of the film growth. In this case, high values E ≥ 6.8 J/cm2 favor the stabilization of this phase over all film thickness, while low values E = 2.6–5.7 J/cm2 lead to a decrease in the manganese concentration in the upper film layer and the formation of additional “low–temperature” phase with TC ≈ 30–50 K provided by silicides MnSi and Mn4Si7 crystallites.
作者简介
A. Drovosekov
Kapitza Institute for Physical Problems, Russian Academy of Sciences
							编辑信件的主要联系方式.
							Email: drovosekov@kapitza.ras.ru
				                					                																			                												                	俄罗斯联邦, 							Moscow, 119334						
A. Savitsky
Kapitza Institute for Physical Problems, Russian Academy of Sciences; Institute of Solid State Physics, Russian Academy of Sciences
														Email: drovosekov@kapitza.ras.ru
				                					                																			                												                	俄罗斯联邦, 							Moscow, 119334; Chernogolovka, Moscow oblast, 142432						
N. Kreines
Kapitza Institute for Physical Problems, Russian Academy of Sciences
														Email: drovosekov@kapitza.ras.ru
				                					                																			                												                	俄罗斯联邦, 							Moscow, 119334						
V. Rylkov
National Research Centre Kurchatov Institute; Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences,Fryazino Branch
														Email: drovosekov@kapitza.ras.ru
				                					                																			                												                	俄罗斯联邦, 							Moscow, 123182; Fryazino, Moscow oblast, 141190						
S. Nikolaev
National Research Centre Kurchatov Institute
														Email: drovosekov@kapitza.ras.ru
				                					                																			                												                	俄罗斯联邦, 							Moscow, 123182						
K. Chernoglazov
National Research Centre Kurchatov Institute
														Email: drovosekov@kapitza.ras.ru
				                					                																			                												                	俄罗斯联邦, 							Moscow, 123182						
A. Taldenkov
National Research Centre Kurchatov Institute
														Email: drovosekov@kapitza.ras.ru
				                					                																			                												                	俄罗斯联邦, 							Moscow, 123182						
E. Cherebylo
Institute on Laser and Information Technologies, Branch of the Federal Scientific Research Centre“Crystallography and Photonics,” Russian Academy of Sciences
														Email: drovosekov@kapitza.ras.ru
				                					                																			                												                	俄罗斯联邦, 							Shatura, Moscow oblast, 140700						
V. Mikhalevskii
Institute on Laser and Information Technologies, Branch of the Federal Scientific Research Centre“Crystallography and Photonics,” Russian Academy of Sciences
														Email: drovosekov@kapitza.ras.ru
				                					                																			                												                	俄罗斯联邦, 							Shatura, Moscow oblast, 140700						
O. Novodvorskii
Institute on Laser and Information Technologies, Branch of the Federal Scientific Research Centre“Crystallography and Photonics,” Russian Academy of Sciences
														Email: drovosekov@kapitza.ras.ru
				                					                																			                												                	俄罗斯联邦, 							Shatura, Moscow oblast, 140700						
K. Maslakov
Moscow State University
														Email: drovosekov@kapitza.ras.ru
				                					                																			                												                	俄罗斯联邦, 							Moscow, 119991						
P. Pandey
Helmholtz-Zentrum Dresden–Rossendorf, Institute of Ion Beam Physics and Materials Research
														Email: drovosekov@kapitza.ras.ru
				                					                																			                												                	德国, 							Dresden, 01328						
S. Zhou
Helmholtz-Zentrum Dresden–Rossendorf, Institute of Ion Beam Physics and Materials Research
														Email: drovosekov@kapitza.ras.ru
				                					                																			                												                	德国, 							Dresden, 01328						
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