Effect of Laser Fluence on Magnetic Properties of Thin MnxSi1 – x (x ≈ 0.5) Films Prepared by Pulsed Laser Deposition
- Authors: Drovosekov A.B.1, Savitsky A.O.1,2, Kreines N.M.1, Rylkov V.V.3,4, Nikolaev S.N.3, Chernoglazov K.Y.3, Taldenkov A.N.3, Cherebylo E.A.5, Mikhalevskii V.A.5, Novodvorskii O.A.5, Maslakov K.I.6, Pandey P.7, Zhou S.7
-
Affiliations:
- Kapitza Institute for Physical Problems, Russian Academy of Sciences
- Institute of Solid State Physics, Russian Academy of Sciences
- National Research Centre Kurchatov Institute
- Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino Branch
- Institute on Laser and Information Technologies, Branch of the Federal Scientific Research Centre “Crystallography and Photonics,” Russian Academy of Sciences
- Moscow State University
- Helmholtz-Zentrum Dresden–Rossendorf, Institute of Ion Beam Physics and Materials Research
- Issue: Vol 60, No 11 (2018)
- Pages: 2188-2193
- Section: Semiconductors
- URL: https://journal-vniispk.ru/1063-7834/article/view/204272
- DOI: https://doi.org/10.1134/S1063783418110045
- ID: 204272
Cite item
Abstract
Abstract—The effect of laser pulse energy E on the possibility of forming of a homogeneous “high-temperature” ferromagnetic phase in MnxSi1 – x (x ≈ 0.5) alloy films grown by pulsed laser deposition onto an Al2O3 (0001) substrate has been studied. The high-temperature phase with manganese concentration x ≈ 0.53 and the Curie temperature TC ~ 200–300 K is shown to form near the substrate at the initial stage of the film growth. In this case, high values E ≥ 6.8 J/cm2 favor the stabilization of this phase over all film thickness, while low values E = 2.6–5.7 J/cm2 lead to a decrease in the manganese concentration in the upper film layer and the formation of additional “low–temperature” phase with TC ≈ 30–50 K provided by silicides MnSi and Mn4Si7 crystallites.
About the authors
A. B. Drovosekov
Kapitza Institute for Physical Problems, Russian Academy of Sciences
Author for correspondence.
Email: drovosekov@kapitza.ras.ru
Russian Federation, Moscow, 119334
A. O. Savitsky
Kapitza Institute for Physical Problems, Russian Academy of Sciences; Institute of Solid State Physics, Russian Academy of Sciences
Email: drovosekov@kapitza.ras.ru
Russian Federation, Moscow, 119334; Chernogolovka, Moscow oblast, 142432
N. M. Kreines
Kapitza Institute for Physical Problems, Russian Academy of Sciences
Email: drovosekov@kapitza.ras.ru
Russian Federation, Moscow, 119334
V. V. Rylkov
National Research Centre Kurchatov Institute; Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences,Fryazino Branch
Email: drovosekov@kapitza.ras.ru
Russian Federation, Moscow, 123182; Fryazino, Moscow oblast, 141190
S. N. Nikolaev
National Research Centre Kurchatov Institute
Email: drovosekov@kapitza.ras.ru
Russian Federation, Moscow, 123182
K. Yu. Chernoglazov
National Research Centre Kurchatov Institute
Email: drovosekov@kapitza.ras.ru
Russian Federation, Moscow, 123182
A. N. Taldenkov
National Research Centre Kurchatov Institute
Email: drovosekov@kapitza.ras.ru
Russian Federation, Moscow, 123182
E. A. Cherebylo
Institute on Laser and Information Technologies, Branch of the Federal Scientific Research Centre“Crystallography and Photonics,” Russian Academy of Sciences
Email: drovosekov@kapitza.ras.ru
Russian Federation, Shatura, Moscow oblast, 140700
V. A. Mikhalevskii
Institute on Laser and Information Technologies, Branch of the Federal Scientific Research Centre“Crystallography and Photonics,” Russian Academy of Sciences
Email: drovosekov@kapitza.ras.ru
Russian Federation, Shatura, Moscow oblast, 140700
O. A. Novodvorskii
Institute on Laser and Information Technologies, Branch of the Federal Scientific Research Centre“Crystallography and Photonics,” Russian Academy of Sciences
Email: drovosekov@kapitza.ras.ru
Russian Federation, Shatura, Moscow oblast, 140700
K. I. Maslakov
Moscow State University
Email: drovosekov@kapitza.ras.ru
Russian Federation, Moscow, 119991
P. Pandey
Helmholtz-Zentrum Dresden–Rossendorf, Institute of Ion Beam Physics and Materials Research
Email: drovosekov@kapitza.ras.ru
Germany, Dresden, 01328
S. Zhou
Helmholtz-Zentrum Dresden–Rossendorf, Institute of Ion Beam Physics and Materials Research
Email: drovosekov@kapitza.ras.ru
Germany, Dresden, 01328
Supplementary files
