Microstructure of Si Crystals Subjected to Irradiation with High-Energy H+ Ions and Heat Treatment by High-Resolution Three-Crystal X-Ray Diffraction and Transmission Electron Microscopy


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Abstract

The structural features of the formation of radiation defects in proton-implanted layers of silicon plates during their heat treatment have been studied. New data on the nature, the characteristics, and the microdefect concentration in Si crystals irradiated with protons with energies 100 + 200 + 300 keV with the total dose 2 × 1016 cm–2 and the evolution of the defect structure during heat treatment have been obtained by high-resolution three-crystal X-ray diffraction and transmission electron microscopy over wide temperature range from 200 to 1100°C.

About the authors

V. E. Asadchikov

Shubnikov Institute of Crystallography, Federal Research Centre Crystallography and Photonics,
Russian Academy of Sciences

Author for correspondence.
Email: sig74@mail.ru
Russian Federation, Moscow, 117333

I. G. D’yachkova

Shubnikov Institute of Crystallography, Federal Research Centre Crystallography and Photonics,
Russian Academy of Sciences

Email: sig74@mail.ru
Russian Federation, Moscow, 117333

D. A. Zolotov

Shubnikov Institute of Crystallography, Federal Research Centre Crystallography and Photonics,
Russian Academy of Sciences

Email: sig74@mail.ru
Russian Federation, Moscow, 117333

F. N. Chukhovskii

Shubnikov Institute of Crystallography, Federal Research Centre Crystallography and Photonics,
Russian Academy of Sciences

Email: sig74@mail.ru
Russian Federation, Moscow, 117333

L. M. Sorokin

Ioffe Institute

Email: sig74@mail.ru
Russian Federation, St. Petersburg, 194021

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