GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography

Аннотация

A significant difference in the growth mechanism of spatially closed structures of gallium nitride during selective growth in submicron windows with and without penetration into the GaN sublayer was demonstrated. The mechanisms of generation and development of dislocations, their role in the formation of self-organizing coaxial structures were modeled.