Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface


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Abstract

The formation of GaN nanocrystals on the graphene-like AlN (g-AlN) modification and graphene-like (g-Si3N3) silicon nitride by ammonia molecular beam epitaxy has been investigated. It has been found that the GaN growth on the g-Si3N3 surface leads to the formation of misoriented nanocrystals. During the GaN growth on the g-AlN surface, the epitaxial growth of similarly oriented GaN quantum dots of the graphite-like modification has been observed. The lattice parameters and energy structure of two graphite-like GaN modifications with the alternating AB (graphite structure) and AA+ (hexagonal boron nitride structure) layers have been calculated.

About the authors

A. S. Kozhukhov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: dmilakhin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

I. A. Aleksandrov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: dmilakhin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

N. V. Rzheutski

State Scientific and Production Association “Optics, Optoelectronics, and Laser Technology”

Email: dmilakhin@isp.nsc.ru
Belarus, Minsk, 220072

E. V. Lebiadok

State Scientific and Production Association “Optics, Optoelectronics, and Laser Technology”

Email: dmilakhin@isp.nsc.ru
Belarus, Minsk, 220072

E. A. Razumets

State Scientific and Production Association “Optics, Optoelectronics, and Laser Technology”

Email: dmilakhin@isp.nsc.ru
Belarus, Minsk, 220072

K. S. Zhuravlev

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University

Email: dmilakhin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090

D. S. Milakhin

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Author for correspondence.
Email: dmilakhin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

T. V. Malin

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: dmilakhin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

V. G. Mansurov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: dmilakhin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

Yu. G. Galitsyn

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: dmilakhin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090

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