Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface
- Authors: Kozhukhov A.S.1, Aleksandrov I.A.1, Rzheutski N.V.2, Lebiadok E.V.2, Razumets E.A.2, Zhuravlev K.S.1,3, Milakhin D.S.1, Malin T.V.1, Mansurov V.G.1, Galitsyn Y.G.1
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- State Scientific and Production Association “Optics, Optoelectronics, and Laser Technology”
- Novosibirsk State University
- Issue: Vol 61, No 12 (2019)
- Pages: 2329-2334
- Section: Semiconductors
- URL: https://journal-vniispk.ru/1063-7834/article/view/206844
- DOI: https://doi.org/10.1134/S1063783419120308
- ID: 206844
Cite item
Abstract
The formation of GaN nanocrystals on the graphene-like AlN (g-AlN) modification and graphene-like (g-Si3N3) silicon nitride by ammonia molecular beam epitaxy has been investigated. It has been found that the GaN growth on the g-Si3N3 surface leads to the formation of misoriented nanocrystals. During the GaN growth on the g-AlN surface, the epitaxial growth of similarly oriented GaN quantum dots of the graphite-like modification has been observed. The lattice parameters and energy structure of two graphite-like GaN modifications with the alternating AB (graphite structure) and AA+ (hexagonal boron nitride structure) layers have been calculated.
About the authors
A. S. Kozhukhov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: dmilakhin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
I. A. Aleksandrov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: dmilakhin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
N. V. Rzheutski
State Scientific and Production Association “Optics, Optoelectronics, and Laser Technology”
Email: dmilakhin@isp.nsc.ru
Belarus, Minsk, 220072
E. V. Lebiadok
State Scientific and Production Association “Optics, Optoelectronics, and Laser Technology”
Email: dmilakhin@isp.nsc.ru
Belarus, Minsk, 220072
E. A. Razumets
State Scientific and Production Association “Optics, Optoelectronics, and Laser Technology”
Email: dmilakhin@isp.nsc.ru
Belarus, Minsk, 220072
K. S. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: dmilakhin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
D. S. Milakhin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Author for correspondence.
Email: dmilakhin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
T. V. Malin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: dmilakhin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. G. Mansurov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: dmilakhin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
Yu. G. Galitsyn
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: dmilakhin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
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